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| GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES * SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER * LOW CRSS: 0.02 pF (TYP) * HIGH GPS: 20 dB (TYP) AT 900 MHz * LOW NF: 1.1 dB TYP AT 900 MHz * LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m * ION IMPLANTATION * AVAILABLE IN TAPE & REEL OR BULK Power Gain, GPS (dB) 20 NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MHz 5 NF 0 0 5 10 0 DESCRIPTION The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 A Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 A Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 A Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz UNITS dB dB V mA V V A A mS pF pF 18 0.5 25 1.0 0.02 16 13 5 -3.5 -3.5 10 10 35 1.5 0.03 20 40 MIN NE25139 39 TYP 1.1 20 MAX 2.5 California Eastern Laboratories Noise Figure, NF (dB) NE25139 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VG1S VG2S ID PT TCH TSTG PARAMETERS Drain to Source Voltage Gate 1 to Source Voltage Gate 2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 13 -4.5 -4.5 IDSS 200 125 -55 to +125 TYPICAL NOISE PARAMETERS (TA = 25C) (VDS = 5 V, VG2S = 0 V, IDS = 10 mA) FREQ. (GHz) 0.5 0.9 1.5 2.0 3.0 4.0 NFOPT (dB) 0.9 1.2 1.5 1.9 2.5 3.3 GA (dB) 18.5 16.0 14.6 12.5 11.0 9.5 0.9 0.82 0.71 0.55 0.34 0.25 OPT MAG ANG 18 28 45 75 116 154 Rn/50 1.9 1.2 0.9 0.67 0.5 0.4 Note: 1. Operation in excess of anyone of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25 C) TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 250 DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE 30 VDS = 5V Total Power Dissipation, PT (mW) FREE AIR Drain Current, ID (mA) 200 VG2S = 1.0V 20 150 0.5 V 10 100 0V 50 -0.5 V 0 0 25 50 75 100 125 0 -2.0 -1.0 0 +1.0 Ambient Temperature, TA (C) FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE Gate 1 to Source Voltage, VG1S (V) FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Forward Transfer Admittance, |YFS| (mS) Forward Transfer Admittance, |YFS| (mS) 30 VDS = 5V f = 1kHz 30 VDS = 5 V f = 1 kHz VG2S = 1.0 V 20 20 VG2S = 1.0 10 0.5 V -0.5 V 0 -2.0 -1.0 0 +1.0 0V 10 VG2S = 0.5 V 0 0 10 20 30 Gate 1 to Source Voltage, VG1S (V) Drain Current, ID (mA) NE25139 TYPICAL PERFORMANCE CURVES (TA = 25C) INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2.0 VDS = 5 V f = 1kHz POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE 30 VDS = 5 V VG2S = 1 V ID = 10 mA f = 900 MHz 1 10 Input Capacitance, CISS (pF) 15 GPS VG2S = 1 V at ID = 10 mA 1 0 5 -15 NF -30 1.0 VG2S = 1 V at ID = 5 mA 1 -45 -1.0 0 +1.0 0 -2.0 -1.0 0 +1.0 +2.0 -3.0 Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT 25 VDS = 5 V VG2S = 1 V f = 900 MHz 20 10 15 GPS 5 10 5 NF 0 0 5 10 0 Drain Current, ID (mA) Noise Figure, NF (dB) Power Gain, GP (dB) Noise Figure, NF (dB) Power Gain, GP (dB) NE25139 NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters UGW NGF IS N RG RD RS RIS RID TAU CDSO C11O C11TH VINFL DELTGS DELTDS LAMBDA C11DELT C12O C12SAT CGDSAT KBK VBR NBR (1) Libra EEFET3 Model FET1 100e-6 4 8.78e-10 1.33 0 0 0 0 0 5.17e-12 1.19e-13 6.1e-13 1.6e-13 -1.1 1.82 0.682 \0.036 0 0 6.81e-14 6.81e-14 0.03 6.5 2 FET2 100e-6 4 8.78e-10 1.33 0 0 0 0 0 5.17e-12 1.19e-13 6.1e-13 1.6e-13 -1.1 1.82 0.682 0.036 0 0 6.81e-14 6.81e-14 0.03 6.5 2 Parameters IDSOC RDB CBS GDBM KDB VDSM GMMAXAC GAMMAAC KAPAAC PEFFAC VTOAC VTSOAC VDELTAC GMMAX GAMMA KAPA PEFF VTO VTSO VDELT VCH VSAT VGO VDSO FET1 0.07 1.0e9 0.16e-12 0.005 11.1 7.1e-11 0.0475 0.0107 0.0001 44.9 -1.584 -100 0.062 0.0554 0.006 0.046 1.636 -1.57 -100 0.135 1 1.119 -0.654 3 FET2 0.07 1.0e9 0.16e-12 0.005 11.1 7.1e-11 0.0875 0.0051 0.0052 44.9 -1.545 -100 0.062 0.0304 0.005 0.0005 1.636 -1.5 -10 0.1 1 1.119 -0.0035 10 NE25139 NONLINEAR MODEL SCHEMATIC PORT Pdrain port = 2 CAP Cg2d C = 0.15 RES Rd R = 4.58 PORT P1 port = 3 IND Lg2 L = 0.40 RES Rg2 R = 1.44 EEFET3 FET2 UGW=0 N=0 FILE = NE720_b.mdif MODE = nonlinear CAP C12 C = 0.32 CAP Cg1d C = 5.64e-03 RES R12 R = 1.13 RES RDS R = 711 PORT Pgate1 port = 1 IND Lg1 L = 1.65 RES Rg1 R = 1.52 EEFET3 FET1 UGW=0 N=0 FILE = NE720_b.mdif MODE = nonlinear CAP CDS C = 7.60e-02 CAP Cg1s C = 0.41 RES Rs R = 5.79 CAP Cg2s C = 0.39 IND Ls L = 1.78 UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms PORT P4 port = 4 NOTES: 1. This UGW value scales the model parameters on page 1. 2. This N value is the number of gate fingers and scales the model parameters on page 1. MODEL RANGE Frequency: 0.1 to 4 GHz Bias: VDS = 5 V, Vg1s= -0.785 V, Vg2s= 0 V, ID = 10 mA NE25139 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) j50 j100 j150 +90 +120 +60 +150 j10 j250 +30 0 10 S11 4 GHz 25 10 50 S22 100 150 250 .1 GHz S11 .1 GHz +180 - S12 4 GHz S21 .1 GHz S12 .1 GHz 1.0 1.5 2.0 -120 S21 2.5 -90 -60 .5 .10 .15 .20 .25 0 -j10 S22 4 GHz -j100 -j50 -j250 -150 -j150 -30 -j25 Coordinates in Ohms Frequency in GHz (VDS = 5 V, VG2S = 0 V, IDS = 10 mA) NE25139 VDS = 5 V, VG2S = 0 V, IDS = 10 mA FREQUENCY (GHz) 0.1 0.2 0.4 0.6 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 MAG 1.0 1.0 0.99 0.97 0.94 0.92 0.82 0.69 0.60 0.51 0.51 0.63 S11 ANG -4 -8 -15 -23 -35 -39 -61 -86 -110 -131 -147 -167 MAG 1.96 1.92 1.91 1.90 1.90 1.90 1.88 1.52 1.41 1.39 1.37 1.20 S21 ANG 174 169 158 148 132 126 99 71 45 19 -6 -47 MAG 0.001 0.001 0.001 0.002 0.004 0.004 0.006 0.008 0.012 0.023 0.039 0.042 S12 ANG 87 85 82 81 80 79 78 95 118 153 162 157 MAG 0.96 0.96 0.95 0.94 0.94 0.94 0.94 0.95 0.96 0.97 0.97 0.96 S22 ANG -1 -2 -3 -3 -4 -5 -6 -9 -12 -18 -27 -42 0.47 0.51 0.70 1.14 1.18 1.49 2.03 2.21 1.34 0.32 0.04 0.07 K S21 (dB) 5.8 5.7 5.6 5.6 5.6 5.6 5.5 3.6 3.0 2.9 2.1 1.6 MAG1 (dB) 32.9 32.8 32.8 27.5 24.2 22.6 19.2 16.6 17.2 17.8 15.1 14.6 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE25139 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 j150 +90 +120 S21 1.2 GHz +150 +30 +60 j10 j250 0 10 25 50 S22 100 150 250 .1 GHz S22 4 GHz S11 .1 GHz +180 - 1.0 .5 .10 .15 .20 .25 0 -j10 S11 4 GHz -j250 -j150 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VDS = 5 V, VG2S = 1 V, ID = 10 mA) -150 1.5 2.0 -120 S21 2.5 -90 -60 -30 NE25139 VDS = 5 V, VG2S = 1 V, ID = 10 mA FREQUENCY (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 MAG .99 .99 .99 .98 .97 .97 .96 .95 .94 .92 .91 .88 S11 ANG -3 -7 -9 -13 -16 -19 -22 -25 -29 -29 -35 -35 MAG 2.36 2.39 2.31 2.23 2.42 2.30 2.33 2.23 2.45 2.30 2.35 2.37 S21 ANG 177 169 164 160 158 150 146 142 137 131 126 124 MAG .001 .001 .002 .002 .003 .003 .004 .005 .005 .006 .006 .006 S12 ANG 87 85 82 82 81 81 80 79 79 78 78 78 MAG .97 .98 .98 .97 .99 .96 .99 .96 .99 .97 .98 .99 S22 ANG -1 -3 -3 -6 -6 -8 -9 -9 -13 -11 -15 -13 0.47 0.51 0.70 1.14 1.18 1.49 2.03 2.21 1.34 0.32 0.04 0.07 K S21 (dB) 5.83 5.7 5.6 5.6 5.6 5.6 5.5 3.6 3.0 2.9 2.1 1.6 MAG1 (dB) 2.9 32.8 32.8 27.5 24.2 22.6 19.2 16.6 17.2 17.8 15.1 14.6 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain, MSG = Maximum Stable Gain OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) ORDERING INFORMATION PART NUMBER NE25139 NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 NE25139T1U73 NE25139U74 NE25139T1U74 AVAILABILITY Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel IDSS RANGE (mA) 5 - 40 5 - 40 5 - 15 5 - 15 10 - 25 10 - 25 20 - 35 20 - 35 30 - 40 30 - 40 MARKING 2.9 0.2 0.95 0.85 2 3 1.9 1 4 PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 1.1+0.2 -0.1 4. Gate 1 +0.10 0.6 -0.05 0.8 0.16 +0.10 -0.06 U71 U71 U72 U72 U73 U73 U74 U74 5 0 to 0.1 5 Note: All dimensions are typical unless otherwise specified. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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